COMPONENT NAME AND QUANTITY | 5 LIGHT EMITTING DIODE |
SEMICONDUCTOR MATERIAL | GALLIUM ARSENIDE PHOSPHIDE ALL LIGHT EMITTING DIODE |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 3.0 MAXIMUM FORWARD VOLTAGE, DC AND |
| 5.0 MINIMUM REVERSE BREAKDOWN VOLTAGE, DC ALL LIGHT EMITTING DIODE |
CURRENT RATING PER CHARACTERISTIC | 20.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC ALL LIGHT EMITTING DIODE |
POWER RATING PER CHARACTERISTIC | 120.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL LIGHT EMITTING DIODE |
COLOR TONE PRODUCED PER SOURCE | YELLOW LENS ALL LIGHT EMITTING DIODE |
LENS TRANSPARENCY | TRANSLUCENT ALL LIGHT EMITTING DIODE |
LUMINOUS INTENSITY | 1.0 MILLICANDELA MINIMUM ALL LIGHT EMITTING DIODE |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 DEG CELSIUS JUNCTION |
INCLOSURE MATERIAL | PLASTIC |
MOUNTING METHOD | TERMINAL |
TERMINAL LENGTH | 0.027 INCHES NOMINAL |
TERMINAL TYPE AND QUANTITY | 10 PIN |
OVERALL LENGTH | 0.500 INCHES NOMINAL |
OVERALL HEIGHT | 0.115 INCHES MAXIMUM |
OVERALL WIDTH | 0.100 INCHES NOMINAL |
FUNCTION FOR WHICH DESIGNED | VISIBLE LIGHT EMITTING |
SPECIAL FEATURES | WEAPON SYSTEM ESSENTIAL; ALL LIGHT EMITTING DIODES HAVE A JUNCTION PATTER ARRANGEMENT OF PN |
CRITICALITY CODE JUSTIFICATION | FEAT |